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1
A study on the formation mechanism of ytterbium silicide for Schottky contact applications

Na, Sekwon; Choi, Hwayoul; Lee, Byunghoon; Choi, Juyun; Seo, Yujin; Kim, Hyoungsub; Lee, Seok-Hee; et al, SURFACE AND INTERFACE ANALYSIS, v.44, no.11-12, pp.1497 - 1502, 2012-11

2
Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure

Kim, Gwang-Sik; Yoo, Gwangwe; Seo, Yujin; Kim, Seung-Hwan; Cho, Karam; Cho, Byung-Jin; Shin, Changhwan; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.6, pp.709 - 712, 2016-06

3
Effective Schottky Barrier Height Lowering of Metal/n-Ge with a TiO2/GeO2 Interlayer Stack

Kim, Gwang-Sik; Kim, Sun-Woo; Kim, Seung-Hwan; Park, June; Seo, Yujin; Cho, Byung-Jin; Shin, Changhwan; et al, ACS APPLIED MATERIALS INTERFACES, v.8, no.51, pp.35419 - 35425, 2016-12

4
Fermi Level Depinning in Ti/GeO2/n-Ge via the Interfacial Reaction Between Ti and GeO2

Seo, Yujin; Lee, Tae In; Ahn, Hyunjun; Moon, Jungmin; Hwang, Wan Sik; Yu, Hyun-Yong; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.4242 - 4245, 2017-10

5
Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film

Ahn, Hyunjun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603, 2017-06

6
Investigation of Border Trap Characteristics in the AlON/GeO2/Ge Gate Stacks

Seo, Yujin; Kim, Choong-Ki; Lee, Tae-In; Hwang, Wan Sik; Yu, Hyun-Yong; Choi, Yang-Kyu; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.10, pp.3998 - 4001, 2017-10

7
Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Lee, Tae In; Seo, Yujin; Moon, Jung Min; Ahn, Hyunjun; Yu, Hyun-Young; Hwang, Wan Sik; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.130, pp.57 - 62, 2017-04

8
The Impact of an Ultrathin Y2O3 Layer on GeO2 Passivation in Ge MOS Gate Stacks

Seo, Yujin; Lee, Tae In; Yoon, Chang Mo; Park, Bo Eun; Hwang, Wan Sik; Kim, Hyungjun; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3303 - 33007, 2017-08

9
The Work Function Behavior of Aluminum-Doped Titanium Carbide Grown by Atomic Layer Deposition

Moon, Jung Min; Ahn, Hyun Jun; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Rho, Il Cheol; Kim, Choon Hwan; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.4, pp.1423 - 1427, 2016-04

10
Very Low-Work-Function ALD-Erbium Carbide (ErC2) Metal Electrode on High-K Dielectrics

Ahn, Hyun Jun; Moon, Jungmin; Koh, Sungho; Seo, Yujin; Kim, Choong-Ki; Rho, Il Cheol; Kim, Choon Hwan; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.7, pp.2858 - 2863, 2016-07

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