Showing results 1 to 3 of 3
Alleviation of fermi-level pinning effect at metal/germanium interface by the insertion of graphene layers Baek, Seung Heon; Seo, Yu Jin; Oh, Joong Gun; Park, Min Gyu Albert; Bong, Jae Hoon; Yoon, Seong Jun; Seo, Minsu; et al, APPLIED PHYSICS LETTERS, v.105, no.7, 2014-08 |
Enhanced Device Performance of Germanium Nanowire Junction less (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment Yoon, Young Gwang; Kim, Tae Kyun; Hwang, In-Chan; Lee, Hyun-Seung; Hwang, Byeong Woon; Moon, Jung-Min; Seo, Yu Jin; et al, ACS APPLIED MATERIALS & INTERFACES, v.6, no.5, pp.3150 - 3155, 2014-03 |
The Mechanism of Schottky Barrier Modulation of Tantalum Nitride/Ge Contacts Seo, Yu Jin; Lee, Sukwon; Baek, Seung-heon Chris; Hwang, Wan Sik; Yu, Hyun-Yong; Lee, Seok-Hee; Cho, Byung-Jin, IEEE ELECTRON DEVICE LETTERS, v.36, no.10, pp.997 - 1000, 2015-10 |
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