Browse "EE-Journal Papers(저널논문)" by Author Park, Young-Min
Showing results 1 to 5 of 5
| Cubic-Structured HfLaO for the Blocking Layer of a Charge-Trap Type Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS EXPRESS, v.3, no.9, 2010-08 |
| Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device Park, Jong-Kyung; Park, Young-Min; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; Cho, Byung-Jin, APPLIED PHYSICS LETTERS, v.96, no.22, 2010-05 |
| Lanthanum-Oxide-Doped Nitride Charge-Trap Layer for a TANOS Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Iim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.10, pp.3314 - 3320, 2011-10 |
| Mechanism of Date Retention Improvement by High Temperature Annealing of Al(2)O(3) Blocking Layer in Flash Memory Device Park, Jong-Kyung; Park, Young-Min; Lee, Seok-Hee; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.50, no.4, 2011-04 |
| Structural and compositional dependence of gadolinium-aluminum oxide for the application of charge-trap-type nonvolatile memory devices Park, Young-Min; Park, Jong-Kyung; Song, Myeong-Ho; Lim, Sung-Kyu; Oh, Jae-Sub; Joo, Moon-Sig; Hong, Kwon; et al, APPLIED PHYSICS LETTERS, v.96, no.5, 2010-02 |
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