Showing results 1 to 17 of 17
A low-temperature-grown TiO2-based device for the flexible stacked RRAM application Jeong, Hu Young; Kim, Yong In; Lee, JeongYong; Choi, Sung-Yool, NANOTECHNOLOGY, v.21, no.11, 2010-03 |
Bipolar resistive switching in amorphous titanium oxide thin film Jeong, Hu Young; Lee, JeongYong; Ryu, Min-Ki; Choi, Sung-Yool, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.4, no.1-2, pp.28 - 30, 2010-02 |
Conduction and Low-Frequency Noise Analysis in Al/alpha-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices Lee, Jung-Kyu; Jeong, Hu Young; Cho, In-Tak; Lee, JeongYong; Choi, Sung-Yool; Kwon, Hyuck-In; Lee, Jong-Ho, IEEE ELECTRON DEVICE LETTERS, v.31, no.6, pp.603 - 605, 2010-06 |
DEFECT FORMATION IN THE SOLID-PHASE EPITAXIAL-GROWTH OF GAAS FILMS ON SI (001) SUBSTRATE CHO, KI; Choo, Woong Kil; Lee, JeongYong; Park, Sin Chong; NISHINAGA, T, JOURNAL OF APPLIED PHYSICS, v.69, no.1, pp.237 - 242, 1991-01 |
Direct observation of microscopic change induced by oxygen vacancy drift in amorphous TiO2 thin films Jeong, Hu Young; Lee, JeongYong; Choi, Sung-Yool, APPLIED PHYSICS LETTERS, v.97, no.4, 2010-07 |
EFFECT OF STRESS SIGN AND FILM THICKNESS ON INTERFACE NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED MULTILAYERS Park, HyoHoon; YOO, JB; OH, DK; KIM, JS; Lee, JeongYong, JOURNAL OF APPLIED PHYSICS, v.75, no.10, pp.4990 - 4993, 1994-05 |
Evolution of the surface cross-hatch pattern in InxGa1-xAs/GaAs layers grown by metal-organic chemical vapor deposition Yoon, M; Lee, B; Baek, JH; Park, HyoHoon; Lee, EH; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.68, no.1, pp.16 - 18, 1996-01 |
Flexible room-temperature NO2 gas sensors based on carbon nanotubes/reduced graphene hybrid films Jeong, Hu Young; Lee, Dae-Sik; Choi, Hong Kyw; Lee, Duck Hyun; Kim, Ji-Eun; Lee, JeongYong; Lee, Won-Jong; et al, APPLIED PHYSICS LETTERS, v.96, no.21, 2010-05 |
FORMATION OF MISFIT DISLOCATIONS DURING ZN-DIFFUSION-INDUCED INTERMIXING OF A GAINASP/INP HETEROSTRUCTURE Park, HyoHoon; NAM, ES; LEE, YT; LEE, EH; Lee, JeongYong, APPLIED PHYSICS LETTERS, v.59, no.16, pp.2025 - 2027, 1991-10 |
HOMOGENEOUS NUCLEATION OF MISFIT DISLOCATIONS IN STRAINED LAYERS Park, HyoHoon; Lee, JeongYong, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.33, no.6A, pp.3409 - 3414, 1994-06 |
Impact of amorphous titanium oxide film on the device stability of Al/TiO2/Al resistive memory Jeong, Hu Young; Kim, Sung Kyu; Lee, JeongYong; Choi, Sung-Yool, APPLIED PHYSICS A-MATERIALS SCIENCE PROCESSING, v.102, pp.967 - 972, 2011-03 |
Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices Jeong, Hu Young; Lee, JeongYong; Choi, Sung-Yool, ADVANCED FUNCTIONAL MATERIALS, v.20, no.22, pp.3912 - 3917, 2010-11 |
Metal-oxide-semiconductor field effect transistor using oxidized mu c-Si/ultrathin oxide gate structure Baik, SJ; Choi, JH; Lee, JeongYong; Lim, Koeng Su, SUPERLATTICES AND MICROSTRUCTURES, v.28, no.5-6, pp.477 - 483, 2000 |
Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films Jeong, Hu Young; Lee, JeongYong; Choi, Sung-Yool; Kim, Jeong Won, APPLIED PHYSICS LETTERS, v.95, no.16, 2009-10 |
MICROSTRUCTURAL DEGRADATION DURING ZN DIFFUSION IN A GAINASP/INP HETEROSTRUCTURE - LAYER MIXING, MISFIT DISLOCATION GENERATION, AND ZN3P2 PRECIPITATION Park, HyoHoon; LEE, KH; Lee, JeongYong; LEE, YT; LEE, EH; LEE, JY; HONG, SK; et al, JOURNAL OF APPLIED PHYSICS, v.72, no.9, pp.4063 - 4072, 1992-11 |
Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices Jeong, Hu Young; Kim, Sung Kyu; Lee, JeongYong; Choi, Sung-Yool, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.10, pp.979 - 982, 2011 |
Surface morphology of InGaAs on GaAs(100) by chemical beam epitaxy using unprecracked monoethylarsine, triethylgallium and trimethylindium Park, SJ; Ro, JR; Ha, JS; Kim, SB; Park, HyoHoon; Lee, EH; Yi, JY; et al, SURFACE SCIENCE, v.350, no.1-3, pp.221 - 228, 1996-04 |
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