Showing results 1 to 6 of 6
A new extraction method to determine bias dependent source series resistance in GaAs FET's Kim, CH; Yoon, KS; Yang, JW; Lee, JH; Park, Chul Soon; Lee, JJ; Pyun, KE, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.46, no.9, pp.1242 - 1250, 1998-09 |
A novel structure of silicon field emission cathode with sputtered TiW for gate electrode and TEOS oxide for gate dielectric Kang, SW; Cho, KI; Lee, JJ; Lee, Kwyro, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.46, no.11, pp.2253 - 2255, 1999-11 |
Amorphous GaAs passivation of ion-beam-etched InGaAs vertical-cavity surface-emitting lasers Park, HyoHoon; Yoo, BS; Chu, HY; Park, MS; Lee, JJ; Lee, HG; Lee, EH; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.29, no.4, pp.522 - 525, 1996-08 |
Characteristics of an area-variable varactor diode Kim, DW; Lee, JJ; Kwon, YS; Hong, Songcheol, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.44, no.11, pp.2053 - 2057, 1996-11 |
Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer Yoo, BS; Chu, HY; Park, HyoHoon; Lee, HG; Lee, JJ, IEEE JOURNAL OF QUANTUM ELECTRONICS, v.33, no.10, pp.1794 - 1800, 1997 |
Vision-based displacement measurement method for high-rise building structures using partitioning approach Park, Jong-Woong; Lee, JJ; Jung, Hyung-Jo; Myung, Hyun, NDT & E INTERNATIONAL, v.43, pp.642 - 647, 2010-10 |
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