Showing results 1 to 21 of 21
A Comparative Study on Hot-Carrier Injection in 5-story Vertically Integrated Inversion-Mode and Junctionless-Mode Gate-All-Around MOSFETs Kim, Seong-Yeon; Lee, Byung-Hyun; Hur, Jae; Park, Jun-Young; Jeon, Seung-Bae; Lee, Seung-Wook; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.39, no.1, pp.4 - 7, 2018-01 |
A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling Lee, Byung-Hyun; Moon, Dong-Il; Jang, HyunJae; Kim, Chang-Hoon; Seol, Myeong-Lok; Choi, Ji-Min; Lee, Dong-Il; et al, NANOSCALE, v.6, no.14, pp.7799 - 7804, 2014-04 |
A Vertically Integrated Junctionless Nanowire Transistor Lee, Byung-Hyun; Hur, Jae; Kang, Min-Ho; Bang, Tewook; Ahn, Dae-Chul; Lee, Dongil; Kim, Kwang-Hee; et al, NANO LETTERS, v.16, no.3, pp.1840 - 1847, 2016-03 |
Comprehensive Analysis of Gate-Induced Drain Leakage in Vertically Stacked Nanowire FETs: Inversion-Mode Versus Junctionless Mode Hur, Jae; Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Bang, Tewook; Jeon, Seung-Bae; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.5, pp.541 - 544, 2016-05 |
Controlled anisotropic wetting of scalloped silicon nanogroove Kim, Gun-Hee; Lee, Byung-Hyun; Im, Hwon; Jeon, Seung-Bae; Kim, Daewon; Seol, Myeong-Lok; Hwang, Hyundoo; et al, RSC ADVANCES, v.6, no.48, pp.41914 - 41918, 2016 |
Direct Observation of a Carbon Filament in Water-Resistant Organic Memory Lee, Byung-Hyun; Bae, Hagyoul; Seong, Hyejeong; Lee, Dong-Il; Park, Hongkeun; Choi, Young Joo; Im, Sung-Gap; et al, ACS NANO, v.9, no.7, pp.7306 - 7313, 2015-07 |
Foldable and Disposable Memory on Paper Lee, Byung-Hyun; Lee, Dong-Il; Bae, Hagyoul; Seong, Hyejeong; Jeon, Seung-Bae; Seol, Myeong-Lok; Han, Jin-Woo; et al, SCIENTIFIC REPORTS, v.6, 2016-12 |
Impact of crystalline damage on a vertically integrated junctionless nanowire transistor Ahn, Dae-Chul; Lee, Byung-Hyun; Kang, Min-Ho; Hur, Jae; Bang, Tewook; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.109, no.18, 2016-10 |
Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels Park, Jun-Young; Lee, Byung-Hyun; Chang, Ki Soo; Kim, Dong Uk; Jeong, Chanbae; Kim, Choong-Ki; Bae, Hagyoul; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.11, pp.4393 - 4399, 2017-11 |
LF Noise Analysis for Trap Recovery in Gate Oxides Using Built-In Joule Heater Jeon, Chang-Hoon; Kim, Choong-Ki; Park, Jun-Young; Jeong,Ui-Sik; Lee, Byung-Hyun; Kim, Kyung Rok; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.12, pp.5081 - 5086, 2017-12 |
Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs Park, Jun-Young; Moon, Dong-Il; Bae, Hagyoul; Roh, Young Tak; Seol, Myeong-Lok; Lee, Byung-Hyun; Jeon, Chang-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.7, pp.843 - 846, 2016-07 |
Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor Park, Jun-Young; Lee, Byung-Hyun; Lee, Geon-Beom; Bae, Hagyoul; Choi, Yang-Kyu, ACS APPLIED MATERIALS & INTERFACES, v.10, no.5, pp.4838 - 4843, 2018-02 |
Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; et al, SCIENTIFIC REPORTS, v.6, 2016-05 |
Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs Bang, Te-Wook; Lee, Byung-Hyun; Kim, Choong-Ki; Ahn, Dae-Chul; Jeon, Seung-Bae; Kang, Min-Ho; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.1, pp.40 - 43, 2017-01 |
Nanoscale FET-Based Transduction toward Sensitive Extended-Gate Biosensors Kwon, Jae; Lee, Byung-Hyun; Kim, Seong-Yeon; Park, Jun-Young; Bae, Hagyoul; Choi, Yang-Kyu; Ahn, Jae-Hyuk, ACS SENSORS, v.4, no.6, pp.1724 - 1729, 2019-06 |
Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application Bae, Hagyoul; Lee, Byung-Hyun; Lee, Dongil; Seol, Myeong-Lok; Kim, Daewon; Han, Jin-Woo; Kim, Choong-Ki; et al, SCIENTIFIC REPORTS, v.6, 2016-12 |
Self-powered data erasing of nanoscale flash memory by triboelectricity Jin, Ik Kyeong; Park, Jun-Young; Lee, Byung-Hyun; Jeon, Seung-Bae; Tcho, Il-Woong; Park, Sang-Jae; Kim, Weon-Guk; et al, NANO ENERGY, v.52, pp.63 - 70, 2018-10 |
Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jinsu; Ahn, Dae-Chul; Park, Jun-Young; Hur, Jae; Kim, Myung-Su; et al, ACS NANO, v.10, no.12, pp.10894 - 10900, 2016-12 |
Ultra-Fast Erase Method of SONOS Flash Memory by Instantaneous Thermal Excitation Ahn, Dae-Chul; Seol, Myeong-Lok; Hur, Jae; Moon, Dong-Il; Lee, Byung-Hyun; Han, Jin-Woo; Park, Jun-Young; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.190 - 192, 2016-02 |
Vertically Integrated Nanowire-Based Unified Memory Lee, Byung-Hyun; Ahn, Dae-Chul; Kang, Min-Ho; Jeon, Seung-Bae; Choi, Yang-Kyu, NANO LETTERS, v.16, no.9, pp.5909 - 5916, 2016-09 |
Vertically Integrated Nanowire-Based Zero-Capacitor Dynamic Random Access Memory Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Choi, Yang-Kyu, ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, v.6, no.1, pp.Q1 - Q5, 2017 |
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