Showing results 1 to 4 of 4
EXCESS CURRENT IN N+GAAS-ALXGA1-XAS-NGAAS HETEROJUNCTIONS LU, SS; Lee, Kwyro; LEE, KH; NATHAN, MI; HEIBLUM, M; WRIGHT, SL, SURFACE SCIENCE, v.228, no.1-3, pp.430 - 432, 1990-04 |
IMPURITY DIFFUSION ENHANCEMENT OF INTERDIFFUSION IN AN INGAPAS-GAAS HETEROSTRUCTURE LEE, KH; Park, HyoHoon; STEVENSON, DA, JOURNAL OF APPLIED PHYSICS, v.65, no.3, pp.1048 - 1052, 1989-02 |
MICROSTRUCTURAL DEGRADATION DURING ZN DIFFUSION IN A GAINASP/INP HETEROSTRUCTURE - LAYER MIXING, MISFIT DISLOCATION GENERATION, AND ZN3P2 PRECIPITATION Park, HyoHoon; LEE, KH; Lee, JeongYong; LEE, YT; LEE, EH; LEE, JY; HONG, SK; et al, JOURNAL OF APPLIED PHYSICS, v.72, no.9, pp.4063 - 4072, 1992-11 |
THEORETICAL AND EXPERIMENTAL-STUDY OF THE LONGITUDINAL UNIAXIAL-STRESS DEPENDENCE OF I-V-CHARACTERISTICS IN GAAS-ALXGA1-XAS-GAAS HETEROJUNCTION BARRIERS LU, SS; Lee, Kwyro; LEE, KH; NATHAN, MI; HEIBLUM, M; WRIGHT, SL, JOURNAL OF APPLIED PHYSICS, v.67, no.10, pp.6360 - 6367, 1990-05 |
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