Browse "EE-Journal Papers(저널논문)" by Author Kwong, DL

Showing results 1 to 26 of 26

1
A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics

Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02

2
Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates

Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03

3
An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05

4
Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation

Loh, WY; Cho, Byung Jin; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12

5
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05

6
Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si

Yu, HY; Li, MF; Cho, Byung Jin; Yeo, CC; Joo, MS; Kwong, DL; Pan, JS; et al, APPLIED PHYSICS LETTERS, v.81, no.2, pp.376 - 378, 2002-07

7
Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts

Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jin; Chan, DSH; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10

8
Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process

Park, CS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, THIN SOLID FILMS, v.462, pp.15 - 18, 2004-09

9
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process

Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10

10
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics

Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12

11
HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT

Yoon, Gi-Wan; Han, LK; Kim, GW; Yan, J; Kwong, DL, ELECTRONICS LETTERS, v.31, no.14, pp.1196 - 1198, 1995-07

12
Improvement of electrical properties of MOCVD HfO2 by multistep deposition

Yeo, CC; Cho, Byung Jin; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11

13
Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric

Kim, SJ; Cho, Byung Jin; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08

14
Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application

Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11

15
Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack

Joo, MS; Park, CS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343, 2006-05

16
Localized oxide degradation in ultrathin gate dielectric and its statistical analysis

Loh, WY; Cho, Byung Jin; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04

17
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

Kim, SJ; Cho, Byung Jin; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09

18
MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics

Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02

19
MOS characteristics of substituted Al gate on high-kappa dielectric

Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11

20
MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2

Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09

21
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications

Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06

22
Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric

Joo, MS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12

23
Thermal instability of effective work function in metal/high-kappa stack and its material dependence

Joo, MS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11

24
Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si

Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jin; Kwong, DL; Tung, CH; et al, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11

25
Thermally stable fully silicided Hf-silicide metal-gate electrode

Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06

26
Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics

Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, Byung Jin; Li, MF; Kwong, DL, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.431 - 433, 2003-10

Discover

Type

Open Access

Date issued

. next

Subject

. next

rss_1.0 rss_2.0 atom_1.0