Browse "EE-Journal Papers(저널논문)" by Author Kwong, DL
Showing results 1 to 26 of 26
| A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics Yu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.63 - 65, 2003-02 |
| Al2O3-Ge-On-insulator n- and p-MOSFETs with fully NiSi and NiGe dual gates Yu, DS; Huang, CH; Chin, A; Zhu, CX; Li, MF; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.3, pp.138 - 140, 2004-03 |
| An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.24, no.5, pp.298 - 300, 2003-05 |
| Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation Loh, WY; Cho, Byung Jin; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12 |
| Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05 |
| Energy gap and band alignment for (HfO2)(x)(Al2O3)(1-x) on (100) Si Yu, HY; Li, MF; Cho, Byung Jin; Yeo, CC; Joo, MS; Kwong, DL; Pan, JS; et al, APPLIED PHYSICS LETTERS, v.81, no.2, pp.376 - 378, 2002-07 |
| Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jin; Chan, DSH; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10 |
| Feasibility study of using thin aluminum nitride film as a buffer layer for dual metal gate process Park, CS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, THIN SOLID FILMS, v.462, pp.15 - 18, 2004-09 |
| Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10 |
| High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12 |
| HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT Yoon, Gi-Wan; Han, LK; Kim, GW; Yan, J; Kwong, DL, ELECTRONICS LETTERS, v.31, no.14, pp.1196 - 1198, 1995-07 |
| Improvement of electrical properties of MOCVD HfO2 by multistep deposition Yeo, CC; Cho, Byung Jin; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11 |
| Improvement of voltage linearity in high-kappa MIM capacitors using HfO2-SiO2 stacked dielectric Kim, SJ; Cho, Byung Jin; Li, MF; Ding, SJ; Zhu, CX; Yu, MB; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.8, pp.538 - 540, 2004-08 |
| Integrated high-k (k similar to 19) MIM capacitor with Cu/low-k interconnects for RF application Yu, MB; Xiong, YZ; Kim, SJ; Balakumar, S; Zhu, CX; Li, MF; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.11, pp.793 - 795, 2005-11 |
| Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stack Joo, MS; Park, CS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B, v.24, no.3, pp.1341 - 1343, 2006-05 |
| Localized oxide degradation in ultrathin gate dielectric and its statistical analysis Loh, WY; Cho, Byung Jin; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04 |
| Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers Kim, SJ; Cho, Byung Jin; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09 |
| MIM capacitors using atomic-layer-deposited high-kappa (HfO2)(1-x)(Al2O3)(x) dielectrics Hu, H; Zhu, CX; Yu, XF; Chin, A; Li, MF; Cho, Byung Jin; Kwong, DL; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.2, pp.60 - 62, 2003-02 |
| MOS characteristics of substituted Al gate on high-kappa dielectric Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.725 - 727, 2004-11 |
| MOS characteristics of synthesized HfAlON-HfO2 stack using AIN-HfO2 Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.9, pp.619 - 621, 2004-09 |
| RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06 |
| Stoichiometry dependence of fermi-level pinning in fully silicided (FUSI) NiSi gate on high-K dielectric Joo, MS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.26, no.12, pp.882 - 884, 2005-12 |
| Thermal instability of effective work function in metal/high-kappa stack and its material dependence Joo, MS; Cho, Byung Jin; Balasubramanian, N; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.11, pp.716 - 718, 2004-11 |
| Thermal stability of (HfO2)(x)(Al2O3)(1-x) on Si Yu, HY; Wu, N; Li, MF; Zhu, CX; Cho, Byung Jin; Kwong, DL; Tung, CH; et al, APPLIED PHYSICS LETTERS, v.81, no.19, pp.3618 - 3620, 2002-11 |
| Thermally stable fully silicided Hf-silicide metal-gate electrode Park, CS; Cho, Byung Jin; Kwong, DL, IEEE ELECTRON DEVICE LETTERS, v.25, no.6, pp.372 - 374, 2004-06 |
| Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectrics Yang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, Byung Jin; Li, MF; Kwong, DL, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.13, no.10, pp.431 - 433, 2003-10 |
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