Browse "EE-Journal Papers(저널논문)" by Author Kuk, Song-Hyeon
Showing results 1 to 5 of 5
| An Investigation of HZO-Based n/p-FeFET Operation Mechanism and Improved Device Performance by the Electron Detrapping Mode Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Baek, Seung-Hyub; Han, Jae-Hoon; Kim, Sang-Hyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.4, pp.2080 - 2087, 2022-04 |
| Examination of Ferroelectric FET for "Cold" Nonvolatile Memory Kuk, Song-Hyeon; Han, Seung-Min; Kim, Bong Ho; Kim, Joon Pyo; Kim, Seong-Kwang; Ahn, Seung-Yeop; Park, Min Hyuk; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.8, pp.4122 - 4127, 2023-08 |
| Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Lee, Chan Jik; et al, ADVANCED ELECTRONIC MATERIALS, v.10, no.1, 2024-01 |
| Memory window enhancement in n-type ferroelectric field-effect transistors by engineering ozone exposure in atomic layer deposition of HfZrOx films Jeon, Jihoon; Kuk, Song-Hyeon; Cho, Ah-Jin; Baek, Seung-Hyub; Kim, Sang-Hyeon; Kim, Seong Keun, APPLIED PHYSICS LETTERS, v.122, no.23, 2023-06 |
| Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; et al, ADVANCED ELECTRONIC MATERIALS, v.9, no.5, 2023-05 |
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