Browse "EE-Journal Papers(저널논문)" by Author Kim, Tae Kyun
Showing results 1 to 5 of 5
| Enhanced Device Performance of Germanium Nanowire Junction less (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar Plasma Treatment Yoon, Young Gwang; Kim, Tae Kyun; Hwang, In-Chan; Lee, Hyun-Seung; Hwang, Byeong Woon; Moon, Jung-Min; Seo, Yu Jin; et al, ACS APPLIED MATERIALS & INTERFACES, v.6, no.5, pp.3150 - 3155, 2014-03 |
| First Demonstration of Junctionless Accumulation-Mode Bulk FinFETs With Robust Junction Isolation Kim, Tae Kyun; Kim, Dong Hyun; Yoon, Young Gwang; Moon, Jung Min; Hwang, Byeong Woon; Moon, Dong-Il; Lee, Gi Seong; et al, IEEE ELECTRON DEVICE LETTERS, v.34, no.12, pp.1479 - 1481, 2013-12 |
| First Demonstration of Ultra-Thin SiGe-Channel Junctionless Accumulation-Mode (JAM) Bulk FinFETs on Si Substrate with PN Junction-Isolation Scheme Kim, Dong-Hyun; Kim, Tae Kyun; Yoon, Young Gwang; Hwang, Byeong Woon; Choi, Yang-Kyu; Cho, Byung Jin; Lee, Seok-Hee, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.2, no.5, pp.123 - 127, 2014-09 |
| Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate Jeong, Woo-Jin; Kim, Tae Kyun; Moon, Jung Min; Park, Min Gyu; Yoon, Young Gwang; Hwang, Byeong Woon; Choi, Woo Young; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.30, no.3, 2015-03 |
| Origin of Device Performance Enhancement of Junctionless Accumulation-Mode (JAM) Bulk FinFETs With High-kappa Gate Spacers Choi, Ji Hun; Kim, Tae Kyun; Moon, Jung Min; Yoon, Young Gwang; Hwang, Byeong Woon; Kim, Dong Hyun; Lee, Seok-Hee, IEEE ELECTRON DEVICE LETTERS, v.35, no.12, pp.1182 - 1184, 2014-12 |
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