Browse "EE-Journal Papers(저널논문)" by Author Kang, Sang-Jung
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| A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect Seo, Jung-Won; Baik, Seung-Jae; Kang, Sang-Jung; Hong, Yun-Ho; Yang, Ji-Hwan; Lim, Koeng-Su, APPLIED PHYSICS LETTERS, v.98, no.23, pp.233505, 2011-06 |
| Transparent flexible resistive random access memory fabricated at room temperature Seo, Jung-Won; Park, Jae-Woo; Lim, Koeng-Su; Kang, Sang-Jung; Hong, Yun-Ho; Yang, Ji-Hwan; Fang, Liang; et al, APPLIED PHYSICS LETTERS, v.95, no.13, pp.133508, 2009-10 |
| Transparent resistive random access memory and its characteristics for nonvolatile resistive switching Seo, Jung-Won; Park, Jae-Woo; Lim, Koeng-Su; Yang, Ji-Hwan; Kang, Sang-Jung, APPLIED PHYSICS LETTERS, v.93, no.22, 2008-12 |
| Tunable work function of a WO(x) buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells Fang, Liang; Baik, Seung-Jae; Kim, Jeong-Won; Kang, Sang-Jung; Seo, Jung-Won; Jeon, Jin-Wan; Kim, Yoon-Hak; et al, JOURNAL OF APPLIED PHYSICS, v.109, no.10, pp.104501, 2011-05 |
| Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells Fang, Liang; Baik, Seung-Jae; Lim, Koeng-Su; Yoo, Seung-Hyup; Seo, Myung-Soo; Kang, Sang-Jung; Seo, Jung-Won, APPLIED PHYSICS LETTERS, v.96, no.19, pp.193501, 2010-05 |
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