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High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

Kim, Giuk; Lee, Sangho; Eom, Taehyong; Kim, Taeho; Jung, Minhyun; Shin, Hunbeom; Jeong, Yeongseok; et al, JOURNAL OF MATERIALS CHEMISTRY C, v.10, no.26, pp.9802 - 9812, 2022-07

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