Browse "EE-Journal Papers(저널논문)" by Author Kang, JY

Showing results 1 to 6 of 6

1
CHARACTERIZATION OF ION-BEAM DEPOSITED REFRACTORY WNX FILMS ON GAAS

Lee, JS; Park, Chul Soon; Kang, JY; Ma, DS; Lee, Jeong Yong, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.8, no.5, pp.1117 - 1121, 1990-10

2
Low leakage and high performance of nMOSFET using SiGe layer as a diffusion barrier

Mheen, B; Song, YJ; Kang, JY; Shim, KH; Hong, Songcheol, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, v.7, no.4-6, pp.375 - 378, 2004-08

3
PROPERTIES OF WNX FILMS AND WNX/GAAS SCHOTTKY DIODES PREPARED BY ION-BEAM ASSISTED DEPOSITION TECHNIQUE

Lee, JS; Park, Chul Soon; Yang, JW; Kang, JY; Ma, DS, JOURNAL OF APPLIED PHYSICS, v.67, no.2, pp.1134 - 1136, 1990-01

4
Strained-SiGe complementary MOSFETs adopting different thicknesses of silicon cap layers for low power and high performance applications

Mheen, B; Song, YJ; Kang, JY; Hong, Songcheol, ETRI JOURNAL, v.27, no.4, pp.439 - 445, 2005-08

5
The enhancement of Q factor in RPCVD SiGe varactors by the structural modification of the base-collector junction

Mheen, B; Suh, D; Kim, SH; Shim, KH; Kang, JY; Hong, Songcheol, IEEE ELECTRON DEVICE LETTERS, v.24, no.4, pp.239 - 241, 2003-04

6
THERMAL STABILITIES AND MICROSTRUCTURES OF TUNGSTEN COMPOUND CONTACTS ON N-GAAS FABRICATED BY LOW-ENERGY ION-BEAM-ASSISTED DEPOSITION

Park, Chul Soon; Lee, JS; Kang, JY; Lee, Jeong Yong, APPLIED PHYSICS LETTERS, v.59, no.14, pp.1767 - 1769, 1991-09

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