Showing results 1 to 8 of 8
An HSPICE HBT model for InP-based single HBTs Yang, Kyounghoon; GutierrezAitken, AL; Zhang, X; Batthacharya, P; Haddad, GI, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.43, no.9, pp.1470 - 1472, 1996-09 |
Design, modeling, and characterization of monolithically integrated InP-based (1.55 mu m) high-speed (24Gb/s) p-i-nMBT front-end photoreceivers Yang, Kyounghoon; GutierrezAitken, AL; Zhang, XK; Haddad, GI; Bhattacharya, P, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.14, no.8, pp.1831 - 1839, 1996-08 |
High speed monolithically integrated p-i-n/HBT photoreceivers Syao, KC; GutierrezAitken, AL; Yang, Kyounghoon; Zhang, XK; Haddad, GI; Bhattacharya, PK, IEICE TRANSACTIONS ON ELECTRONICS, v.E80C, no.5, pp.695 - 702, 1997-05 |
High-efficiency class-A power amplifiers with a dual-bias-control scheme Yang, Kyounghoon; Haddad, GI; East, JR, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.47, no.8, pp.1426 - 1432, 1999-08 |
Low crosstalk (<-40dB) in 1.55 mu m high speed OEIC photoreceiver arrays with novel on-chip shielding GutierrezAitken, AL; Bhattacharya, P; Syao, KC; Yang, Kyounghoon; Haddad, GI; Zhang, X, ELECTRONICS LETTERS, v.32, no.18, pp.1706 - 1708, 1996-08 |
Monolithically integrated 16-channel 1.55 mu m pin/HBT photoreceiver array with 11.5 GHz bandwidth Syao, KC; Yang, Kyounghoon; Zhang, X; Haddad, GI; Bhattacharya, P, ELECTRONICS LETTERS, v.33, no.1, pp.82 - 83, 1997-01 |
Power performance of InP-based single and double heterojunction bipolar transistors Sawdai, D; Yang, Kyounghoon; Hsu, SSH; Pavlidis, D; Haddad, GI, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.47, no.8, pp.1449 - 1456, 1999-08 |
Ring oscillator using an RTD-HBT heterostructure Lin, CH; Yang, Kyounghoon; East, JR; Haddad, GI; Chow, DH; Warren, LD; Dunlap, HL; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.572 - 575, 2001-09 |
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