Browse "EE-Journal Papers(저널논문)" by Author Ha, D
Showing results 1 to 3 of 3
| Investigation of gate-induced drain leakage (GIDL) current in thin body devices: Single-gate ultra-thin body, symmetrical double-gate, and asymmetrical double-gate MOSFETs Choi, Yang-Kyu; Ha, D; King, TJ; Bokor, J, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.2073 - 2076, 2003-04 |
| Low-frequency noise characteristics in p-channel FinFETs Lee, JS; Choi, Yang-Kyu; Ha, D; King, TJ; Bokor, J, IEEE ELECTRON DEVICE LETTERS, v.23, no.12, pp.722 - 724, 2002-12 |
| Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs Ha, D; Takeuchi, H; Choi, Yang-Kyu; King, TJ, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.12, pp.1989 - 1996, 2004-12 |
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