Browse "EE-Journal Papers(저널논문)" by Author Dong, Z
Showing results 1 to 3 of 3
| A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFETs Guan, H; Li, MF; He, YD; Cho, Byung Jin; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.47, no.8, pp.1608 - 1616, 2000-08 |
| Conduction mechanism under quasibreakdown of ultrathin gate oxide He, YD; Guan, H; Li, MF; Cho, Byung Jin; Dong, Z, APPLIED PHYSICS LETTERS, v.75, no.16, pp.2432 - 2434, 1999-10 |
| Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide Guan, H; Cho, Byung Jin; Li, MF; Xu, Z; He, YD; Dong, Z, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.48, no.5, pp.1010 - 1013, 2001-05 |
Discover
Open Access
- 573 OA Article
Date issued
- 1,837 2020 - 2024
- 5,085 2010 - 2019
- 4,213 2000 - 2009
- 2,379 1990 - 1999
- 665 1980 - 1989