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Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Kang, Sangwoo; Fallahazad, Babak; Lee, Kayoung; Movva, Hema; Kim, Kyounghwan; Corbet, Chris M.; Taniguchi, Takashi; et al, IEEE ELECTRON DEVICE LETTERS, v.36, no.4, pp.405 - 407, 2015-04 |
Nonvolatile Memories Based on Graphene and Related 2D Materials Bertolazzi, Simone; Bondavalli, Paolo; Roche, Stephan; San, Tamer; Choi, Sung-Yool; Colombo, Luigi; Bonaccorso, Francesco; et al, ADVANCED MATERIALS, v.31, no.10, pp.1806663, 2019-03 |
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