Showing results 1 to 6 of 6
A high performance MIM capacitor using HfO(2) dielectrics Hu, H; Zhu, CX; Lu, YF; Li, MF; Cho, Byung Jin; Choi, WK, IEEE ELECTRON DEVICE LETTERS, v.23, no.9, pp.514 - 516, 2002-09 |
A MONOS-type flash memory using a high-k HfAlO charge trapping layer Tan, YN; Chim, WK; Cho, Byung Jin; Choi, WK, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.7, no.9, pp.198 - 200, 2004-08 |
Flip-chip bonding of MEMS scanner for laser display using electroplated AuSn solder bump Chu, KM; Choi, WK; Ko, YC; Lee, JH; Park, HyoHoon; Jeon, DukYoung, IEEE TRANSACTIONS ON ADVANCED PACKAGING, v.30, no.1, pp.27 - 33, 2007-02 |
Hafnium aluminum oxide as charge storage and blocking-oxide layers in SONOS-type nonvolatile memory for high-speed operation Tan, YN; Chim, WK; Choi, WK; Joo, MS; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.4, pp.654 - 662, 2006-04 |
Over-erase phenomenon in SONOS-type flash memory and its minimization using a hafnium oxide-charge storage layer Tan, YN; Chim, WK; Cho, Byung Jin; Choi, WK, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.7, pp.1143 - 1147, 2004-07 |
Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applications Hu, H; Zhu, CX; Lu, YF; Wu, YH; Liew, T; Li, MF; Cho, Byung Jin; et al, JOURNAL OF APPLIED PHYSICS, v.94, no.1, pp.551 - 557, 2003-07 |
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