Browse "EE-Journal Papers(저널논문)" by Author Choi, KJ
Showing results 1 to 5 of 5
| Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory Pu, J; Kim, SJ; Lee, SH; Kim, YS; Kim, ST; Choi, KJ; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.29, no.7, pp.688 - 690, 2008-07 |
| Demonstration of high-performance PMOSFETs using Si-SixGe1-x-Si quantum wells with high-kappa/metal-gate stacks Majhi, P; Kalra, P; Harris, R; Choi, KJ; Heh, D; Oh, J; Kelly, D; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.1, pp.99 - 101, 2008-01 |
| Demonstration of L-g similar to 55 nm pMOSFETs with Si/Si0.25Ge0.75/Si channels, high I-on/I-off (> 5 x 10(4)), and controlled short channel effects (SCEs) Lee, SH; Majhi, P; Oh, J; Sassman, B; Young, C; Bowonder, A; Loh, WY; et al, IEEE ELECTRON DEVICE LETTERS, v.29, no.9, pp.1017 - 1020, 2008-09 |
| Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12 |
| Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric Yeo, CC; Cho, Byung Jin; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05 |
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