Browse "EE-Journal Papers(저널논문)" by Author Chan, Daniel S. H.
Showing results 1 to 7 of 7
| Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11 |
| Cubic-Structured HfO2 With Optimized Doping of Lanthanum for Higher Dielectric Constant He, Wei; Zhang, Lu; Chan, Daniel S. H.; Cho, BJ; Zhang, L; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.30, no.6, pp.623 - 625, 2009-06 |
| Effects of volatility of etch by-products on surface roughness during etching of metal gates in Cl-2 Hwang, Wan Sik; Cho, Byung Jin; Chan, Daniel S. H.; Lee, Sang Won; Yoo, Won Jong, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.1, pp.H6 - H10, 2008-01 |
| High-Performance MIM Capacitors Using HfLaO-Based Dielectrics Zhang, Lu; He, Wei; Chan, Daniel S. H.; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.17 - 19, 2010-01 |
| Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11 |
| Process and material properties of HfLaO(x) prepared by atomic layer deposition He, Wei; Chan, Daniel S. H.; Kim, Sun-Jung; Kim, Young-Sun; Kim, Sung-Tae; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G189 - G193, 2008-08 |
| Wide memory window in graphene oxide charge storage nodes Wang, Shuai; Pu, Jing; Chan, Daniel S. H.; Cho, Byung Jin; Loh, Kian Ping, APPLIED PHYSICS LETTERS, v.96, no.14, 2010-04 |
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