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Browse "EE-Journal Papers(저널논문)" by Author Chan, DSH

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Showing results 1 to 13 of 13

1	Aluminum-Doped Gadolinium Oxides as Blocking Layer for Improved Charge Retention in Charge-Trap-Type Nonvolatile Memory Devices Pu, Jing; Chan, Daniel S. H.; Kim, Sun-Jung; Cho, BJ; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2739 - 2745, 2009-11
2	Charge trapping and breakdown mechanism in HfAIO/TaN gate stack analyzed using carrier separation Loh, WY; Cho, Byung Jin; Joo, MS; Li, MF; Chan, DSH; Mathew, S; Kwong, DL, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, v.4, no.4, pp.696 - 703, 2004-12
3	Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate Wu, N; Zhang, QC; Zhu, CX; Yeo, CC; Whang, SJ; Chan, DSH; Li, MF; et al, APPLIED PHYSICS LETTERS, v.84, no.19, pp.3741 - 3743, 2004-05
4	Effects of SiO2/Si3N4 hard masks on etching properties of metal gates Hwang, WS; Cho, Byung Jin; Chan, DSH; Bliznetsov, V; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.24, no.6, pp.2689 - 2694, 2006-11
5	Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterparts Ding, SJ; Hu, H; Zhu, CX; Li, MF; Kim, SJ; Cho, Byung Jin; Chan, DSH; et al, IEEE ELECTRON DEVICE LETTERS, v.25, no.10, pp.681 - 683, 2004-10
6	Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10
7	High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics Ding, SJ; Hu, H; Lim, HF; Kim, SJ; Yu, XF; Zhu, CX; Cho, Byung Jin; et al, IEEE ELECTRON DEVICE LETTERS, v.24, no.12, pp.730 - 732, 2003-12
8	Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure Yue, JMP; Chim, WK; Cho, Byung Jin; Chan, DSH; Qin, WH; Kim, YB; Jang, SA; et al, IEEE ELECTRON DEVICE LETTERS, v.21, no.3, pp.130 - 132, 2000-03
9	Localized oxide degradation in ultrathin gate dielectric and its statistical analysis Loh, WY; Cho, Byung Jin; Li, MF; Chan, DSH; Ang, CH; Zheng, JZ; Kwong, DL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.4, pp.967 - 972, 2003-04
10	Low energy N-2 ion bombardment for removal of (HfO2)(x)(SiON)(1-x) in dilute HF Hwang, WS; Cho, Byung Jin; Chan, DSH; Yoo, WJ, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v.25, no.4, pp.1056 - 1061, 2007-07
11	Metal carbides for band-edge work function metal gate CMOS devices Hwang, WS; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.9, pp.2469 - 2474, 2008-09
12	Multi-layer high-kappa interpoly dielectric for floating gate flash memory devices Zhang, L; He, W; Chan, DSH; Cho, Byung Jin, SOLID-STATE ELECTRONICS, v.52, pp.564 - 570, 2008-04
13	RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications Ding, SJ; Hu, H; Zhu, CX; Kim, SJ; Yu, XF; Li, MF; Cho, Byung Jin; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.51, no.6, pp.886 - 894, 2004-06

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