Showing results 1 to 9 of 9
A simple method for high-frequency characterization of (Ba,Sr)TiO3 thin film capacitors Jang, BT; Kwak, DH; Cha, SY; Lee, SH; Lee, Hee Chul, INTEGRATED FERROELECTRICS, v.20, no.1-4, pp.215 - 224, 1998 |
Deoxidization of iridium oxide thin film Cha, SY; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.38, no.10A, pp.1128 - 1130, 1999-10 |
Effect of rapid thermal annealing on the interface trap density between Pt and (Ba,Sr)TiO3 thin film Kwak, DH; Jang, BT; Cha, SY; Lee, JS; Lee, Hee Chul, INTEGRATED FERROELECTRICS, v.17, no.1-4, pp.179 - 186, 1997 |
Effects of Ir electrodes on the dielectric constants of Ba0.5Sr0.5TiO3 films Cha, SY; Jang, BT; Lee, Hee Chul, JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, v.38, no.1AB, pp.49 - 51, 1999-01 |
Fabrication and characterization of MFISFET using Al2O3 insulating layer for non-volatile memory Shin, CH; Cha, SY; Lee, Hee Chul; Lee, WJ; Yu, BG; Kwak, DH, INTEGRATED FERROELECTRICS, v.34, no.1-4, pp.1553 - 1560, 2001 |
Hysteresis analysis in capacitance-voltage characteristics of Pt/(Ba,Sr)TiO3/Pt structures Kwak, DH; Jang, BT; Cha, SY; Lee, SH; Lee, Hee Chul; Yu, BG, INTEGRATED FERROELECTRICS, v.13, no.1-3, pp.413 - 419, 1996 |
Improvement of dielectric properties by inserting oxygen-rich initial layer in Pt/(Ba,Sr)TiO3/Pt structure Kwak, DH; Lee, SH; Jang, BT; Cha, SY; Lee, Hee Chul, INTEGRATED FERROELECTRICS, v.20, no.1-4, pp.205 - 214, 1998 |
Iridium thin film as a bottom electrode for high dielectric (Ba,Sr)TiO3 capacitors Cha, SY; Jang, BT; Kwak, DH; Shin, CH; Lee, Hee Chul, INTEGRATED FERROELECTRICS, v.17, no.1-4, pp.187 - 195, 1997 |
Ti thickness effects in Pt/Ti bottom electrode on properties of (Ba,Sr)TiO3 thin film Cha, SY; Lee, SH; Lee, Hee Chul, INTEGRATED FERROELECTRICS, v.16, no.1-4, pp.183 - 190, 1997 |
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