Showing results 1 to 4 of 4
Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs Mathew, S; Bera, LK; Balasubramanian, N; Joo, MS; Cho, Byung Jin, THIN SOLID FILMS, v.462, pp.11 - 14, 2004-09 |
Formation of hafnium-aluminum-oxide gate dielectric using single cocktail liquid source in MOCVD process Joo, MS; Cho, Byung Jin; Yeo, CC; Chan, DSH; Whoang, SJ; Mathew, S; Bera, LK; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.50, no.10, pp.2088 - 2094, 2003-10 |
Improvement of electrical properties of MOCVD HfO2 by multistep deposition Yeo, CC; Cho, Byung Jin; Joo, MS; Whoang, SJ; Kwong, DL; Bera, LK; Mathew, S; et al, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.6, no.11, pp.F42 - F44, 2003-11 |
Wet etching characteristics and surface morphology evaluation of MOCVD grown HfO2 film Balasubramanian, M; Bera, LK; Mathew, S; Balasubramanian, N; Lim, V; Joo, MS; Cho, Byung Jin, THIN SOLID FILMS, v.462, no.SI, pp.101 - 105, 2004-09 |
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