Browse "EE-Journal Papers(저널논문)" by Author Bae, Hagyoul

Showing results 1 to 34 of 34

1
A Novel Technique for Curing Hot-CarrierInduced Damage by Utilizing the Forward Current of the PN-Junction in a MOSFET

Lee, Geon-Beom; Kim, Choong-Ki; Park, Jun-Young; Bang, Tewook; Bae, Hagyoul; Kim, Seong-Yeon; Ryu, Seung-Wan; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1012 - 1014, 2017-08

2
A Recoverable Synapse Device Using a Three-Dimensional Silicon Transistor

Hur, Jae; Jang, Byung Chul; Park, Jihun; Moon, Dong-Il; Bae, Hagyoul; Park, Jun-Young; Kim, Gun-Hee; et al, ADVANCED FUNCTIONAL MATERIALS, v.28, no.47, 2018-11

3
A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS2 FET

Bae, Hagyoul; Kim, Choong-Ki; Jeon, Seung-Bae; Shin, Gwang Hyuk; Kim, Eung Taek; Song, Jeong-Gyu; Kim, Youngjun; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.2, pp.231 - 233, 2016-02

4
Abnormal electrical characteristics of multi-layered MoS2 FETs attributed to bulk traps

Kim, Choong-Ki; Yu, Chan Hak; Hur, Jae; Bae, Hagyoul; Jeon, Seung-Bae; Park, Hamin; Kim, Yong Min; et al, 2D MATERIALS, v.3, no.1, pp.015007, 2016-03

5
Bioinspired Polydopamine-Based Resistive-Switching Memory on Cotton Fabric for Wearable Neuromorphic Device Applications

Bae, Hagyoul; Kim, Daewon; Seo, Myungsoo; Jin, Ik Kyeong; Jeon, Seung-Bae; Lee, Hye Moon; Jung, Soo-Ho; et al, ADVANCED MATERIALS TECHNOLOGIES, v.4, no.8, 2019-08

6
Characterization of intrinsic subgap density-of-states in exfoliated MoS2 FETs using a multi-frequency capacitance-conductance technique

Bae, Hagyoul; Kim, Choong-Ki; Choi, Yang-Kyu, AIP ADVANCES, v.7, no.7, 2017-07

7
Chemically-Etched Optical Fiber Tapers for Adiabatic Fundamental Mode Evolution Over O-and C-Bands

Son, Gyeongho; Pradono, Rizki Arif; Choi, Jiwon; Jeong, Youngjae; Han, Dae Seok; Syahadi, Mohamad; Jung, Youngho; et al, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.40, no.14, pp.4832 - 4840, 2022-04

8
Comprehensive Study on the Relation Between Low-Frequency Noise and Asymmetric Parasitic Resistances in a Vertical Pillar-Type FET

Lee, Seung-Wook; Bang, Tewook; Kim, Choong-Ki; Hwang, Kyu-Man; Jang, Byung Chul; Moon, Dong-Il; Bae, Hagyoul; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1008 - 1011, 2017-08

9
Direct Observation of a Carbon Filament in Water-Resistant Organic Memory

Lee, Byung-Hyun; Bae, Hagyoul; Seong, Hyejeong; Lee, Dong-Il; Park, Hongkeun; Choi, Young Joo; Im, Sung-Gap; et al, ACS NANO, v.9, no.7, pp.7306 - 7313, 2015-07

10
Electrothermal Annealing (ETA) Method to Enhance the Electrical Performance of Amorphous-Oxide-Semiconductor (AOS) Thin-Film Transistors (TFTs)

Kim, Choong-Ki; Kim, Eungtaek; Lee, Myung Keun; Park, Jun-Young; Seol, Myeong-Lok; Bae, Hagyoul; Bang, Tewook; et al, ACS APPLIED MATERIALS & INTERFACES, v.8, no.36, pp.23820 - 23826, 2016-09

11
First Demonstration of a Logic-process Compatible Junctionless Ferroelectric FinFET Synapse for Neuromorphic Applications

Seo, Myungsoo; Kang, Min Ho; Jeon, Seung-Bae; Bae, Hagyoul; Hur, Jae; Jang, Byung Chul; Yun, Seokjung; et al, IEEE ELECTRON DEVICE LETTERS, v.39, no.9, pp.1445 - 1448, 2018-09

12
Foldable and Disposable Memory on Paper

Lee, Byung-Hyun; Lee, Dong-Il; Bae, Hagyoul; Seong, Hyejeong; Jeon, Seung-Bae; Seol, Myeong-Lok; Han, Jin-Woo; et al, SCIENTIFIC REPORTS, v.6, 2016-12

13
Functional Circuitry on Commercial Fabric via Textile-Compatible Nanoscale Film Coating Process for Fibertronics

Bae, Hagyoul; Jang, Byung Chul; Park, Hongkeun; Jung, Soo-Ho; Lee, Hye Moon; Park, Jun-Young; Jeon, Seung-Bae; et al, NANO LETTERS, v.10, no.10, pp.6443 - 6452, 2017-10

14
Gateless and Capacitorless Germanium Biristor with a Vertical Pillar Structure

Bae, Hagyoul; Lee, Geon Beom; Hur, Jae; Park, Jun Young; Kim, Da Jin; Kim, Myung Su; Choi, Yang-Kyu, MICROMACHINES, v.12, no.8, 2021-07

15
Highly Biased Linear Condition Method for Separately Extracting Source and Drain Resistance in MOSFETs

Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Beom; Bang, Tewook; Son, Yoon-Ik; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.2, pp.419 - 423, 2018-02

16
Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation

Kim, Choong-Ki; Jeong, Eun Gyo; Kim, Eungtaek; Song, Jeong-Gyu; Kim, Youngjun; Woo, Whang Je; Lee, Myung Keun; et al, NANOTECHNOLOGY, v.28, no.5, 2017-02

17
Improved Technique for Extraction of Effective Mobility by Considering Gate Bias-Dependent Inversion Charges in a Floating-Body Si/SiGe pMOSFET

Bae, Hagyoul; Bang, Tewook; Kim, Choong-Ki; Hur, Jae; Kim, Seyeob; Jeon, Chang-Hoon; Park, Jun-Young; et al, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.17, no.5, pp.3247 - 3250, 2017-05

18
Investigation of Low-Frequency Noise in Nonvolatile Memory Composed of a Gate-All-Around Junctionless Nanowire FET

Jeong, Ui-Sik; Kim, Choong-Ki; Bae, Hagyoul; Moon, Dong-Il; Bang, Tewook; Choi, Ji-Min; Hur, Jae; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.5, pp.2210 - 2213, 2016-05

19
Investigation of Self-Heating Effects in Gate-All-Around MOSFETs With Vertically Stacked Multiple Silicon Nanowire Channels

Park, Jun-Young; Lee, Byung-Hyun; Chang, Ki Soo; Kim, Dong Uk; Jeong, Chanbae; Kim, Choong-Ki; Bae, Hagyoul; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.11, pp.4393 - 4399, 2017-11

20
Joule Heating to Enhance the Performance of a Gate-All-Around Silicon Nanowire Transistor

Jeon, Chang-Hoon; Park, Jun-Young; Seol, Myeong-Lok; Moon, Dong-Il; Hur, Jae; Bae, Hagyoul; Jeon, Seung-Bae; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.6, pp.2288 - 2292, 2016-06

21
Local Electro-Thermal Annealing for Repair of Total Ionizing Dose-Induced Damage in Gate-All-Around MOSFETs

Park, Jun-Young; Moon, Dong-Il; Bae, Hagyoul; Roh, Young Tak; Seol, Myeong-Lok; Lee, Byung-Hyun; Jeon, Chang-Hoon; et al, IEEE ELECTRON DEVICE LETTERS, v.37, no.7, pp.843 - 846, 2016-07

22
Localized Electrothermal Annealing with Nanowatt Power for a Silicon Nanowire Field-Effect Transistor

Park, Jun-Young; Lee, Byung-Hyun; Lee, Geon-Beom; Bae, Hagyoul; Choi, Yang-Kyu, ACS APPLIED MATERIALS & INTERFACES, v.10, no.5, pp.4838 - 4843, 2018-02

23
Logic circuits composed of flexible carbon nanotube thin-film transistor and ultra-thin polymer gate dielectric

Lee, Dongil; Yoon, Jinsu; Lee, Juhee; Lee, Byung-Hyun; Seol, Myeong-Lok; Bae, Hagyoul; Jeon, Seung-Bae; et al, SCIENTIFIC REPORTS, v.6, 2016-05

24
Nano-electromechanical Switch Based on a Physical Unclonable Function for Highly Robust and Stable Performance in Harsh Environments

Hwang, Kyu-Man; Park, Jun-Young; Bae, Hagyoul; Lee, Seung-Wook; Kim, Choong-Ki; Seo, Myungsoo; Im, Hwon; et al, ACS NANO, v.11, no.12, pp.12547 - 12552, 2017-12

25
Nanoscale FET-Based Transduction toward Sensitive Extended-Gate Biosensors

Kwon, Jae; Lee, Byung-Hyun; Kim, Seong-Yeon; Park, Jun-Young; Bae, Hagyoul; Choi, Yang-Kyu; Ahn, Jae-Hyuk, ACS SENSORS, v.4, no.6, pp.1724 - 1729, 2019-06

26
On-Chip Curing by Microwave for Long Term Usage of Electronic Devices in Harsh Environments

Park, Jun-Young; Kim, Weon-Guk; Bae, Hagyoul; Jin, Ik Kyeong; Kim, Da-Jin; Im, Hwon; Tcho, Il-Woong; et al, SCIENTIFIC REPORTS, v.8, 2018-10

27
Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application

Bae, Hagyoul; Lee, Byung-Hyun; Lee, Dongil; Seol, Myeong-Lok; Kim, Daewon; Han, Jin-Woo; Kim, Choong-Ki; et al, SCIENTIFIC REPORTS, v.6, 2016-12

28
Quantitative Analysis of Deuterium Annealing Effect on Poly-Si TFTs by Low Frequency Noise and DC I-V Characterization

Kim, Dohyun; Lim, Sung Kwan; Bae, Hagyoul; Kim, Choong-Ki; Lee, Seung-Wook; Seo, Myungsoo; Kim, Seong-Yeon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.4, pp.1640 - 1644, 2018-04

29
Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing

Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.51, no.10, 2018-03

30
Reply to Comments by Ortiz-Conde et al.

Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Bum; Bang, Tewook; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.9, pp.4022 - 4024, 2018-09

31
Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Park, Jun-Young; Moon, Dong-Il; Seol, Myeong-Lok; Kim, Choong-Ki; Jeon, Chang-Hoon; Bae, Hagyoul; Bang, Tewook; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.63, no.3, pp.910 - 915, 2016-03

32
Self-powered data erasing of nanoscale flash memory by triboelectricity

Jin, Ik Kyeong; Park, Jun-Young; Lee, Byung-Hyun; Jeon, Seung-Bae; Tcho, Il-Woong; Park, Sang-Jae; Kim, Weon-Guk; et al, NANO ENERGY, v.52, pp.63 - 70, 2018-10

33
Self-sustainable wind speed sensor system with omni-directional wind basedtriboelectric generator

Park, Sang-Jae; Lee, Sang Han; Seol, Myeong-Lok; Jeon, Seung-Bae; Bae, Hagyoul; Kim, Daewon; Cho, Gyu-Hyeong; et al, NANO ENERGY, v.55, pp.115 - 122, 2019-01

34
Threshold Voltage Tuning Technique in Gate-All-Around MOSFETs by Utilizing Gate Electrode With Potential Distribution

Park, Jun-Young; Bae, Hagyoul; Moon, Dong-Il; Jeon, Chang-Hoon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.37, no.11, pp.1391 - 1394, 2016-11

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