Browse "EE-Journal Papers(저널논문)" by Author Chan, Daniel S. H.
Showing results 5 to 7 of 7
| Performance Improvement in Charge-Trap Flash Memory Using Lanthanum-Based High-k Blocking Oxide He, Wei; Pu, Jing; Chan, Daniel S. H.; Cho, BJ; Pu, J; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.56, no.11, pp.2746 - 2751, 2009-11 |
| Process and material properties of HfLaO(x) prepared by atomic layer deposition He, Wei; Chan, Daniel S. H.; Kim, Sun-Jung; Kim, Young-Sun; Kim, Sung-Tae; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G189 - G193, 2008-08 |
| Wide memory window in graphene oxide charge storage nodes Wang, Shuai; Pu, Jing; Chan, Daniel S. H.; Cho, Byung Jin; Loh, Kian Ping, APPLIED PHYSICS LETTERS, v.96, no.14, 2010-04 |
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