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Metal carbides for band-edge work function metal gate CMOS devices Hwang, WS; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.9, pp.2469 - 2474, 2008-09 |
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers Kim, SJ; Cho, Byung Jin; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09 |
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