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Browse "EE-Journal Papers(저널논문)" by Author Geum, Dae-Myeong

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Showing results 14 to 25 of 25

14	Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Lee, Chan Jik; et al, ADVANCED ELECTRONIC MATERIALS, v.10, no.1, 2024-01
15	Low-Loss and High-Confinement Photonic Platform Based on Germanium-on-Insulator at Mid-Infrared Range for Optical Sensing Lim, Jinha; Shim, Joonsup; Kim, Inki; Kim, Seong Kwang; Lim, Hyeongrak; Ahn, Seung-Yeop; Park, Juhyuk; et al, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.41, no.9, pp.2824 - 2833, 2023-05
16	Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process Geum, Dae-Myeong; Kim, Seong Kwang; Lee, Subin; Lim, Donghwan; Kim, Hyung-Jun; Choi, Chang Hwan; Kim, Sang-Hyeon, IEEE ELECTRON DEVICE LETTERS, v.41, no.3, pp.433 - 436, 2020-03
17	Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems Geum, Dae-Myeong; Kim, SangHyeon; Kim, Seong Kwang; Kang, SooSeok; Kyhm, JiHoon; Song, Jindong; Choi, Won Jun; et al, SCIENTIFIC REPORTS, v.9, 2019-12
18	Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; et al, ADVANCED ELECTRONIC MATERIALS, v.9, no.5, 2023-05
19	Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties Kim, Bong Ho; Kuk, Song-hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon, NANOSCALE ADVANCES, v.4, no.19, pp.4114 - 4121, 2022-09
20	Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Han, JaeHoon; Kim, Hyungjun; Jeong, YeonJoo; Kim, Sang-Hyeon, IEEE ELECTRON DEVICE LETTERS, v.41, no.4, pp.605 - 608, 2020-04
21	Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Park, Juyeong; Jang, Jae-Hyung; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211, 2021-05
22	Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Chang-Mo; Moon, Seung-Hyun; Kyhm, Jihoon; Han, JaeHoon; Lee, Dong-Seon; et al, NANOSCALE, v.11, no.48, pp.23139 - 23148, 2019-12
23	Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; Kim, Bong Ho; Ahn, Seung-Yeop; Kim, SangHyeon, OPTICS EXPRESS, v.29, no.12, pp.18037 - 18058, 2021-06
24	Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED Park, Juhyuk; Baek, Woojin; Geum, Dae-Myeong; Kim, Sanghyeon, NANOSCALE RESEARCH LETTERS, v.17, no.1, 2022-03
25	Vertical InGaAs Biristor for Sub-1 V Operation Kim, Wu-Kang; Bidenko, Pavlo; Kim, Jongmin; Sim, Jaeho; Han, Joon-Kyu; Kim, Seongkwang; Geum, Dae-Myeong; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.5, pp.681 - 683, 2021-05

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