Showing results 10 to 14 of 14
High-performance RF mixer and operational amplifier BiCMOS circuits using parasitic vertical bipolar transistor in CMOS technology Nam, I; Lee, Kwyro, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.40, pp.392 - 402, 2005-02 |
Low-power direct conversion transceiver for 915 MHz band IEEE 802.15.4b standard based on 0. 18 mu m CMOS technology Nguyen, TK; Le, VH; Duong, QH; Han, SK; Lee, Sang-Gug; Seong, NS; Kim, NS; et al, ETRI JOURNAL, v.30, pp.33 - 46, 2008-02 |
RF CMOS LC-oscillator with source damping resistors Yun, SJ; Cha, CY; Choi, HC; Lee, Sang-Gug, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.16, pp.511 - 513, 2006-09 |
Significance of gate oxide thinning below 1.5 nm on 1/f noise behavior in n-channel metal-oxide-semiconductor field-effect transistors under electrical stress Mheen, B; Kim, M; Song, YJ; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4943 - 4947, 2006-06 |
Sputtering pressure dependent bolometric properties of Ni1-xO thin films for uncooled bolometer applications Kang, In-Ku; Reddy, Y. Ashok Kumar; Shin, Young Bong; Kim, Woo Young; Lee, Hee Chul, CERAMICS INTERNATIONAL, v.43, no.12, pp.9498 - 9504, 2017-08 |
Discover