Showing results 7 to 27 of 27
Heavily Doped Channel Carrier Mobility in β-Ga2O3 Lateral Accumulation MOSFET Kuk, Song-Hyeon; Choi, Seongjun; Kim, Hyeong Yun; Ko, Kyul; Jeong, Jaeyong; Geum, Dae-Myeong; Han, Jae-Hoon; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.5, pp.3429 - 3432, 2024-05 |
Heterogeneous and Monolithic 3D Integration of III-V-Based Radio Frequency Devices on Si CMOS Circuits Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Kim, Duckhyun; Jo, Eunju; Jeong, Hakcheon; et al, ACS NANO, v.16, no.6, pp.9031 - 9040, 2022-06 |
Heterogeneous and Monolithic 3D Integration Technology for Mixed-Signal ICs Jeong, Jaeyong; Geum, Dae-Myeong; Kim, SangHyeon, ELECTRONICS, v.11, no.19, 2022-10 |
High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb Kim, Sang-Hyeon; Roh, Ilpyo; Han, Jae-Hoon; Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Soo Seok; Kang, Hang-Kyu; et al, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.9, pp.42 - 48, 2021 |
High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; You, Jong-Bum; Yoon, Hyeonho; Kim, Joon Pyo; Baek, Woo Jin; et al, OPTICS EXPRESS, v.30, no.23, pp.42663 - 42677, 2022-11 |
Impact of Bottom-Gate Biasing on Implant-Free Junctionless Ge-on- Insulator n-MOSFETs Lim, Hyeong-Rak; Kim, Seongkwang; Han, Jae-Hoon; Kim, Hansung; Geum, Dae-Myeong; Lee, Yun-Joong; Ju, Byeong-Kwon; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.9, pp.1362 - 1365, 2019-09 |
Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; et al, APPLIED PHYSICS LETTERS, v.115, no.14, 2019-09 |
InAs on GaAs Photodetectors Using Thin InAlAs Graded Buffers and Their Application to Exceeding Short-Wave Infrared Imaging at 300 K Kang, Soo Seok; Geum, Dae-Myeong; Kwak, Kisung; Kang, Ji-Hoon; Shim, Cheol-Hwee; Hyun, HyeYoung; Kim, Sang Hyeon; et al, SCIENTIFIC REPORTS, v.9, 2019-09 |
Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Lee, Chan Jik; et al, ADVANCED ELECTRONIC MATERIALS, v.10, no.1, 2024-01 |
Low-Loss and High-Confinement Photonic Platform Based on Germanium-on-Insulator at Mid-Infrared Range for Optical Sensing Lim, Jinha; Shim, Joonsup; Kim, Inki; Kim, Seong Kwang; Lim, Hyeongrak; Ahn, Seung-Yeop; Park, Juhyuk; et al, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.41, no.9, pp.2824 - 2833, 2023-05 |
Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process Geum, Dae-Myeong; Kim, Seong Kwang; Lee, Subin; Lim, Donghwan; Kim, Hyung-Jun; Choi, Chang Hwan; Kim, Sang-Hyeon, IEEE ELECTRON DEVICE LETTERS, v.41, no.3, pp.433 - 436, 2020-03 |
Monolithic integration of visible GaAs and near-infrared InGaAs for multicolor photodetectors by using high-throughput epitaxial lift-off toward high-resolution imaging systems Geum, Dae-Myeong; Kim, SangHyeon; Kim, Seong Kwang; Kang, SooSeok; Kyhm, JiHoon; Song, Jindong; Choi, Won Jun; et al, SCIENTIFIC REPORTS, v.9, 2019-12 |
Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; et al, ADVANCED ELECTRONIC MATERIALS, v.9, no.5, 2023-05 |
Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties Kim, Bong Ho; Kuk, Song-hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon, NANOSCALE ADVANCES, v.4, no.19, pp.4114 - 4121, 2022-09 |
Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Han, JaeHoon; Kim, Hyungjun; Jeong, YeonJoo; Kim, Sang-Hyeon, IEEE ELECTRON DEVICE LETTERS, v.41, no.4, pp.605 - 608, 2020-04 |
Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Park, Juyeong; Jang, Jae-Hyung; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211, 2021-05 |
Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Chang-Mo; Moon, Seung-Hyun; Kyhm, Jihoon; Han, JaeHoon; Lee, Dong-Seon; et al, NANOSCALE, v.11, no.48, pp.23139 - 23148, 2019-12 |
Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; Kim, Bong Ho; Ahn, Seung-Yeop; Kim, SangHyeon, OPTICS EXPRESS, v.29, no.12, pp.18037 - 18058, 2021-06 |
Thermal Studies of 3-D Stacked InGaAs HEMTs and Mitigation Strategy of Self-Heating Effect Using Buried Metal Insertion Jeong, Jaeyong; Kim, Seongkwang; Suh, Yoonje; Shim, Joonsup; Beak, Woo Jin; Choi, Sung Joon; Kim, Joon Pyo; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024-06 |
Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED Park, Juhyuk; Baek, Woojin; Geum, Dae-Myeong; Kim, Sanghyeon, NANOSCALE RESEARCH LETTERS, v.17, no.1, 2022-03 |
Vertical InGaAs Biristor for Sub-1 V Operation Kim, Wu-Kang; Bidenko, Pavlo; Kim, Jongmin; Sim, Jaeho; Han, Joon-Kyu; Kim, Seongkwang; Geum, Dae-Myeong; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.5, pp.681 - 683, 2021-05 |
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