Showing results 2 to 5 of 5
High-Performance and High-Endurance HfO2-Based Ferroelectric Field-Effect Transistor Memory with a Spherical Recess Channel Kim, Taeho; Hwang, Junghyeon; Kim, Giuk; Jung, Minhyun; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.15, no.5, 2021-05 |
Relatively Low-k Ferroelectric Nonvolatile Memory Using Fast Ramping Fast Cooling Annealing Process Hwang, Junghyeon; Kim, Minki; Jung, Minhyun; Kim, Taeho; Goh, Youngin; Lee, Yongsun; Jeon, Sanghun, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.69, no.6, pp.3439 - 3445, 2022-06 |
The Opportunity of Negative Capacitance Behavior in Flash Memory for High-Density and Energy-Efficient In-Memory Computing Applications Kim, Taeho; Kim, Giuk; Lee, Young Kyu; Ko, Dong Han; Hwang, Junghyeon; Lee, Sangho; Shin, Hunbeom; et al, ADVANCED FUNCTIONAL MATERIALS, v.33, no.7, 2023-02 |
Vertical-Pillar Ferroelectric Field-Effect-Transistor Memory Lee, Sangho; Kim, Giuk; Kim, Taeho; Eom, Taehyong; Jeon, Sanghun, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, v.16, no.10, 2022-10 |
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