Browse "EE-Journal Papers(저널논문)" by Subject HFO2
Showing results 2 to 8 of 8
Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate Kim, Taeho; An, Minho; Jeon, Sanghun, AIP ADVANCES, v.10, no.1, 2020-01 |
| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications Oh, Seungyeol; Kim, Taeho; Kwak, Myunghoon; Song, Jeonghwan; Woo, Jiyong; Jeon, Sanghun; Yoo, In Kyeong; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.6, pp.732 - 735, 2017-06 |
| High-Performance MIM Capacitors Using HfLaO-Based Dielectrics Zhang, Lu; He, Wei; Chan, Daniel S. H.; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.17 - 19, 2010-01 |
| High-κ Dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low-Power Steep-Switching Computing Devices Kang, Taeho; Park, Joonho; Jung, Hanggyo; Choi, Haeju; Lee, Sang‐Min; Lee, Nayeong; Lee, Ryong Gyu; et al, ADVANCED MATERIALS, v.36, no.26, 2024-06 |
| Low-Temperature Deuterium Annealing to Improve Performance and Reliability in a MOSFET Yu, Ji-Man; Wang, Dong-Hyun; Ku, Ja-Yun; Han, Joon-Kyu; Jung, Dae-Han; Park, Jun-Young; Choi, Yang-Kyu, SOLID-STATE ELECTRONICS, v.197, 2022-11 |
| Process and material properties of HfLaO(x) prepared by atomic layer deposition He, Wei; Chan, Daniel S. H.; Kim, Sun-Jung; Kim, Young-Sun; Kim, Sung-Tae; Cho, Byung Jin, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.10, pp.G189 - G193, 2008-08 |
| Thermal Stability of ALD-HfO(2)/GaAs Pretreated with Trimethylaluminium Byun, YC (Byun, Young-Chul); An, CH (An, Chee-Hong); Lee, Seok-Hee; Cho, MH (Cho, Mann-Ho); Kim, H (Kim, Hyoungsub), JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.159, no.1, pp.6 - 10, 2012 |
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