Showing results 1 to 1 of 1
HfO2/HfOxNy/HfO2 Gate Dielectric Fabricated by In Situ Oxidation of Plasma-Enhanced Atomic Layer Deposition HfN Middle Layer Maeng, W. J.; Gu, Gil Ho; Park, C. G.; Lee, Kayoung; Lee, Taeyoon; Kim, Hyungjun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.G109 - G113, 2009 |
Discover