Showing results 1 to 5 of 5
A Vertically Integrated Junctionless Nanowire Transistor Lee, Byung-Hyun; Hur, Jae; Kang, Min-Ho; Bang, Tewook; Ahn, Dae-Chul; Lee, Dongil; Kim, Kwang-Hee; et al, NANO LETTERS, v.16, no.3, pp.1840 - 1847, 2016-03 |
Low Operating Voltage and Immediate Read-After-Write of HZO-Based Si Ferroelectric Field-Effect Transistors with High Endurance and Retention Characteristics Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Lee, Chan Jik; et al, ADVANCED ELECTRONIC MATERIALS, v.10, no.1, 2024-01 |
Off-state leakage in MOSFET considering source/drain extension regions Hur, Jae; Jeong, Woo Jin; Shin, Mincheol; Choi, Yang-Kyu, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.36, no.8, pp.085018, 2021-08 |
Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors Jung, Hyo Eun; Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.118, no.19, pp.195703-1 - 195703-7, 2015-11 |
Surface-Roughness-Limited Mean Free Path in Silicon Nanowire Field Effect Transistors Jung, Hyo-Eun; Shin, Mincheol, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.60, no.6, pp.1861 - 1866, 2013-06 |
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