Showing results 19 to 26 of 26
Oxygen Scavenging in HfZrOx-Based n/p-FeFETs for Switching Voltage Scaling and Endurance/Retention Improvement Kim, Bong Ho; Kuk, Song-Hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Suh, Yoon-Je; Jeong, Jaeyong; Geum, Dae-Myeong; et al, ADVANCED ELECTRONIC MATERIALS, v.9, no.5, 2023-05 |
Oxygen scavenging of HfZrO2-based capacitors for improving ferroelectric properties Kim, Bong Ho; Kuk, Song-hyeon; Kim, Seong Kwang; Kim, Joon Pyo; Geum, Dae-Myeong; Baek, Seung-Hyub; Kim, Sang Hyeon, NANOSCALE ADVANCES, v.4, no.19, pp.4114 - 4121, 2022-09 |
Photo-Responsible Synapse Using Ge Synaptic Transistors and GaAs Photodetectors Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Han, JaeHoon; Kim, Hyungjun; Jeong, YeonJoo; Kim, Sang-Hyeon, IEEE ELECTRON DEVICE LETTERS, v.41, no.4, pp.605 - 608, 2020-04 |
Stackable InGaAs-on-Insulator HEMTs for Monolithic 3-D Integration Jeong, Jaeyong; Kim, Seong Kwang; Kim, Jongmin; Geum, Dae-Myeong; Park, Juyeong; Jang, Jae-Hyung; Kim, Sanghyeon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.68, no.5, pp.2205 - 2211, 2021-05 |
Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation Geum, Dae-Myeong; Kim, Seong Kwang; Kang, Chang-Mo; Moon, Seung-Hyun; Kyhm, Jihoon; Han, JaeHoon; Lee, Dong-Seon; et al, NANOSCALE, v.11, no.48, pp.23139 - 23148, 2019-12 |
Tailoring bolometric properties of a TiOx/Ti/TiOx tri-layer film for integrated optical gas sensors![]() Shim, Joonsup; Lim, Jinha; Geum, Dae-Myeong; Kim, Bong Ho; Ahn, Seung-Yeop; Kim, SangHyeon, OPTICS EXPRESS, v.29, no.12, pp.18037 - 18058, 2021-06 |
Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED Park, Juhyuk; Baek, Woojin; Geum, Dae-Myeong; Kim, Sanghyeon, NANOSCALE RESEARCH LETTERS, v.17, no.1, 2022-03 |
Vertical InGaAs Biristor for Sub-1 V Operation Kim, Wu-Kang; Bidenko, Pavlo; Kim, Jongmin; Sim, Jaeho; Han, Joon-Kyu; Kim, Seongkwang; Geum, Dae-Myeong; et al, IEEE ELECTRON DEVICE LETTERS, v.42, no.5, pp.681 - 683, 2021-05 |
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