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Showing results 1 to 4 of 4

1
Electrical and interfacial characterization of atomic layer deposited high-kappa gate dielectrics on GaAs for advanced CMOS devices

Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei-Yip; Mun, Hoe Keat; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1831 - 1837, 2007-08

2
High-Performance MIM Capacitors Using HfLaO-Based Dielectrics

Zhang, Lu; He, Wei; Chan, Daniel S. H.; Cho, Byung Jin, IEEE ELECTRON DEVICE LETTERS, v.31, no.1, pp.17 - 19, 2010-01

3
Metal carbides for band-edge work function metal gate CMOS devices

Hwang, WS; Chan, DSH; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.55, no.9, pp.2469 - 2474, 2008-09

4
Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers

Kim, SJ; Cho, Byung Jin; Bin Yu, M; Li, MF; Xiong, YZ; Zhu, CX; Chin, A; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.9, pp.625 - 627, 2005-09

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