Showing results 1 to 5 of 5
A ZnO cross-bar array resistive random access memory stacked with heterostructure diodes for eliminating the sneak current effect Seo, Jung-Won; Baik, Seung-Jae; Kang, Sang-Jung; Hong, Yun-Ho; Yang, Ji-Hwan; Lim, Koeng-Su, APPLIED PHYSICS LETTERS, v.98, no.23, pp.233505, 2011-06 |
Amorphous Si Rear Schottky Junction Solar Cell With a LiF/Al Back Electrode Fang, Liang; Baik, Seung-Jae; Lim, Soo-Yeon; Yoo, Seung-Hyup; Lim, Koeng-Su, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.9, pp.3048 - 3052, 2011-09 |
Towards a high efficiency amorphous silicon solar cell using molybdenum oxide as a window layer instead of conventional p-type amorphous silicon carbide Park, Sang-Il; Baik, Seung-Jae; Im, Jong-San; Fang, Liang; Jeon, Jin-Wan; Lim, Koeng-Su, APPLIED PHYSICS LETTERS, v.99, no.6, pp.063504, 2011-08 |
Tunable work function of a WO(x) buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells Fang, Liang; Baik, Seung-Jae; Kim, Jeong-Won; Kang, Sang-Jung; Seo, Jung-Won; Jeon, Jin-Wan; Kim, Yoon-Hak; et al, JOURNAL OF APPLIED PHYSICS, v.109, no.10, pp.104501, 2011-05 |
Tungsten oxide as a buffer layer inserted at the SnO2/p-a-SiC interface of pin-type amorphous silicon based solar cells Fang, Liang; Baik, Seung-Jae; Lim, Koeng-Su; Yoo, Seung-Hyup; Seo, Myung-Soo; Kang, Sang-Jung; Seo, Jung-Won, APPLIED PHYSICS LETTERS, v.96, no.19, pp.193501, 2010-05 |
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