Browse "EE-Journal Papers(저널논문)" by Subject tunneling field effect transistor
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| Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Kang, Sangwoo; Fallahazad, Babak; Lee, Kayoung; Movva, Hema; Kim, Kyounghwan; Corbet, Chris M.; Taniguchi, Takashi; et al, IEEE ELECTRON DEVICE LETTERS, v.36, no.4, pp.405 - 407, 2015-04 |
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