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Novel ZrO2/Si3N4 Dual Charge Storage Layer to Form Step-Up Potential Wells for Highly Reliable Multi-Level Cell Application

Cho, Byung Jin; Zhang, G; Hwang, WS; Bobade, SM; Lee, SH; Yoo, WJ, International Electron Device Meeting (IEDM) 2007, pp.0 - 0, 2007-12-01

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