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1
ALD (HfO2)x(Al2O3)1-x high-K gate dielectrics for advanced MOS devices application

Cho, Byung Jin; Yu, HY; Wu, N; Yeo, C; Joo, MS; Li, MF; Zhu, C, 2nd International Conference on Materials for Advanced Technologies, pp.562 - 562, 2003-12-11

2
Electrical and physical properties of Si1-xGex/HfO2/Si MOS-capacitors

Cho, Byung Jin; Wu, N; Zhu, C; Balasubramanian, N; Yeo, CC; Joo, MS; Yu, HY, 2nd International Conference on Materials for Advanced Technologies, pp.535 - 535, 2003-12-11

3
Germanium MOS capacitors with ultra thin HfO2 gate dielectric

Cho, Byung Jin; Zhang, QC; Zu, C; Wu, N; Chin, A; Li, MF; Bera, LK, International Conference on Materials for Advanced Technologies, pp.513 - 513, 2003-12-11

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