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1
245/243GHz, 9.2/10.5dBm Saturated Output Power, 4.6/2.8% PAE, and 28/26dB Gain Power Amplifiers in 65nm CMOS Adopting 2-And 4-way Power Combining

Yun, ByeongHun; Park, Dae-Woong; Choi, Kyung-Sik; Song, Ho-Jin; Lee, Sang-Gug, 2021 IEEE Asian Solid-State Circuits Conference, A-SSCC 2021, Institute of Electrical and Electronics Engineers Inc., 2021-11

2
280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting Double-embedded-Gmax-core

Yun, ByeongHun; Park, Dae-Woong; Choi, Chan-Gyu; Song, Ho-Jin; Lee, Sang-Gug, 2022 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2022, pp.91 - 94, Institute of Electrical and Electronics Engineers Inc., 2022-06-20

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