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High-K HfAlO Charge Trapping Layer in SONOS-type Nonvolatile Memory Device for High Speed Operation

Cho, Byung Jin; Tan, YN; Chim, WK; Choi, WK; Sig, JM; Hau, NT, International Electron Device Meeting (IEDM), December 2004, pp.889 - 892, 2004-12-13

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