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Showing results 1 to 9 of 9

1
Device simulation based on DFT-NEGF using equivalent transport model

Jeong, Woo-Jin; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol; Shin, Min-Cheol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-08

2
Effects of Strain for Nanowire Schottky Barrier p-MOSFETs

Seo, Junbeom; Srivastave, Pooja; Lee, Jaehyun; Jung, Hyo Eun; Kim, Seung chul; Lee, Kwang-Ryeol; Shin, Min-Cheol, ISPSA-2014, ISPSA-2014, 2014-12-08

3
Multi-scale Approach for Roughness Effect of Si-SiO2 Nanowire Interface on Electronic Transport

Kim, Byung-Hyun; Kim, Seungchul; Jung, Hyo Eun; Chung, YongChae; Shin, Min-Cheol; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09

4
Multiscale simulation of Schottky barrier tunnel transistors

Shin, Min-Cheol; Srivastava, Pooja; Seo, Junbeom; Lee, Jaehyun; Kim, Seungchul; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09

5
Quantum simulations of silicon nanowire field effect transistors: surface roughness and strain effects

Shin, Min-Cheol; Jung, Hyo Eun, ISPSA-2014, ISPSA-2014, 2014-12-08

6
Simulation Platform of Nano-devices as the Virtual Fab

Lee, Minho; Lee, Seungchul; Shin, Min-Cheol; Lee, Kwang-Ryeol, The 9th International Conference on Computational Physcics, ICCP-9, 2015-01-09

7
Thermoelectric characteristics of silicon/silicide hetero-junction structured thermoelectric modules

Choi, Won Chul; Zyung, Taehyoung; Kim, Soojung; Jeon, Hyojin; Shin, Min-Cheol; Jang, Moongyu, NANO KOREA 2014, NANO KOREA, 2014-07-03

8
Tuning the Schottky barrier height at silicide/silicon interfaces: An ab-initio study

Pooja Srivastava; Shin, Min-Cheol; Lee, Kwang-Ryeol; Kim, SC., ENGE 2014, ENGE 2014, 2014-11-18

9
Tunnel Field Effect Transistor with an Electron-Hole Bilayer Induced by a Symmetrically Arranged Double-gate

Jeong, Woo-Jin; Kim, Tae Kyun; Moon, Jung Min; Shin, Min-Cheol; Lee, Seok-Hee, ISPSA-2014, ISPSA-2014, 2014-12-08

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