Browse "EE-Conference Papers(학술회의논문)" by Author Shin, Gwang Hyuk
Showing results 1 to 23 of 23
| Ar plasma etching of hexagonal boron nitride films Park, Hamin; Shin, Gwang Hyuk; Lee, Khang June; Choi, Sung-Yool, ICAMD 2017, ICAMD 2017, 2017-12-07 |
| Atomically thin Schottky junction with a gap-mode plasmon for an ultrahigh photoresponsivity in MoS2 based photodetector Jin, Hyeok Jun; Lee, Khang June; Park, Cheol Min; Shin, Gwang Hyuk; Hong Woonggi; Oh, Dongsik; Choi, Sung-Yool, 6th International Workshop on 2D Materials, National Research Foundation of Korea, 2020-09-24 |
| Defect-engineered N-doped graphene for efficient oxygen reduction Bang, Gyeong Sook; Shim, Gi Woong; Jung, Dae Yool; Shin, Gwang Hyuk; Park, Hamin; LEE, JAEEUN; Choi, Sung-Yool, ISE 2017, ISE 2017, 2017-08-30 |
| Floating gate memory based on MoS2 channel and iCVD polymer dielectric with metal nanoparticle charge trapping layer Woo, Myung Hun; Jang, Byung Chul; Choi, Junhwan; Shin, Gwang Hyuk; Seong, Hyejeong; Im, Sung Gap; Choi, Sung Yool, 제3회 한국 그래핀 심포지엄, 한국그래핀연구회, 2016-04-14 |
| Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectric Woo, Myung Hun; Jang, Byung Chul; Choi, Junhwan; Shin, Gwang Hyuk; Seong, Hyejeong; Im, Sung Gap; Choi, Sung Yool, ESSCIRC-ESSDERC 2016, ESSCIRC-ESSDERC 2016, 2016-09-14 |
| Low-Frequency Noise in Hysteresis-Free Multilayer MoS2 FETs Yu, Chan Hak; Kim, Choong Ki; Shin, Gwang Hyuk; Park, Hamin; Park, Ick-Joon; Choi, Yang-Kyu; Choi, Sung-Yool, NANO KOREA 2015, 나노기술연구협의회, 2015-07-01 |
| Metal nanoparticle embedded floating gate memory based on MoS2 with polymer tunneling dielectric layer. Woo, Myung Hun; Jang, Byung Chul; Choi, Junhwan; Shin, Gwang Hyuk; Seong, Hyejeong; Im, Sung Gap; Choi, Sung Yool, 제23회 한국반도체학술대회, 한국반도체연구조합, 2016-02-22 |
| MoS2-based floating gate memory with metal nanoparticle and polymer tunneling dielectric layer Woo, Myung Hun; Jang, Byung Chul; Choi, Jun Hwan; Shin, Gwang Hyuk; Seong, Hye Jeong; Im, Sung Gap; Choi, Sung Yool, ICAMD 2015, ICAMD 2015, 2015-12-09 |
| Multilevel resistive switching memory based on GO/MoS2/GO stack Shin, Gwang Hyuk; Kim, Choong Ki; Bang, Gyeong Sook; Jang, Byung Chul; Woo, Myung Hun; Choi, Yang Kyu; Choi, Sung Yool, AsiaNANO 2016, AsiaNANO 2016, 2016-10-12 |
| Multilevel resistive switching memory based on two-dimensional (2D) layered materials Shin, Gwang Hyuk; Kim, Choong Ki; Bang, Gyeong Sook; Kim, Jong Yun; Jang, Byung Chul; Koo, Beom Jun; Woo, Myung Hun; et al, ICAMD 2015, ICAMD 2015, 2015-12-08 |
| Multilevel Resistive Switching Memory based on Two-Dimensional (2D) Nanomaterials Shin, Gwang Hyuk; Jang, Byung Chul; Woo, Myung Hun; Choi, Sung-Yool, 제23회 한국반도체학술대회, 한국반도체연구조합, 2016-02-22 |
| Multilevel Resistive Switching Memory based on Two-dimensional materials using Simple solution process Shin, Gwang Hyuk; Kim, Choong-Ki; Bang, Gyeong Sook; Jang, Byung Chul; Woo, Myung Hun; Choi, Yang Kyu; Choi, Sung-Yool, Graphene 2016, Graphene 2016, 2016-04-21 |
| Multilevel Resistive Switching Memory using Solution Process with Two-dimensional (2D) Materials Shin, Gwang Hyuk; Bang, Gyeong Sook; Jang, Byung Chul; Woo, Myung Hun; Choi, Sung Yool, NANO KOREA 2016, NANO KOREA 2016, 2016-07-14 |
| Nanoscale Memristors for Nonvolatile Memory and Logic Applications Jang, Byung Chul; Shin, Gwang Hyuk; Kim, Sung Kyu; Choi, Sung Yool, AsiaNANO 2016, AsiaNANO 2016, 2016-10-12 |
| Plasmon Induced Photovoltaic Effect in Vertical Homojunction of Multilayer Graphene Lee, Khang June; Park, Hamin; Shin, Gwang Hyuk; Choi, Sung-Yool, NANO KOREA 2018, NANO KOREA, 2018-07-10 |
| Si-MoS2 Vertical Heterostructure for High Responsivity Photodetector Shin, Gwang Hyuk; Park, Jung Hoon; Lee, Khang June; LEE, GEONBEOM; Jeon Hyun Bae; Choi, Yang-Kyu; Yu, Kyoungsik; et al, RPGR 2018, RPGR 2018, 2018-10-23 |
| Tunneling field-effect transistor based on MoS2-Si vertical hetero-structure Shin, Gwang Hyuk; Koo, Bondae; Park, Hamin; Woo, Youngjun; Choi, Sung-Yool, NANO KOREA 2017, NANO KOREA 2017, 2017-07-13 |
| Tunnelling field effect transistor based on highly p-doped silicon and MoS2 heterostructure Shin, Gwang Hyuk; Koo, BonDae; Park, Hamin; Woo YoungJun; LEE, JAEEUN; Choi, Sung-Yool, Graphene Week 2017, Graphene Week 2017, 2017-09-25 |
| Tunnelling field effect transistor based on MoTe2/MoS2 van der Waals heterojunction Koo, Bondae; Shin, Gwang Hyuk; Park, Hamin; Choi, Sung-Yool, Graphene 2017, Graphene 2017, 2017-03-27 |
| Ultrasensitive WSe2/ɑ-In2Se3 NIR photodetector based on ferroelectric gating effect Jin, Hyeok Jun; Park, Cheolmin; Lee, Khang June; Shin, Gwang Hyuk; Choi, Sung-Yool, RPGR 2021: Recent Progress in Graphene and Two-dimensional Materials Research Conference, Recent Progress in Graphene and Two-dimensional Materials Research, 2021-10-11 |
| Unipolar resistive switching memory based on graphene oxide for flexible crossbar array applications Koo, Beom Jun; Kim, Jong Yun; Jang, Byung Chul; Lee, Khang June; Shin, Gwang Hyuk; Choi, Sung-Yool, NANO KOREA 2015, 나노기술연구협의회, 2015-07-02 |
| Vertical tunneling field effect transistor based on Si-MoS2 van der Waals heterojunction Shin, Gwang Hyuk; Park, Hamin; Lee, Khang Jun; Choi, Sung-Yool, RPGR 2019: Recent Progress in Graphene and Two-dimensional Materials Research Conference, Recent Progress in Graphene and Two-dimensional Materials Research, 2019-10-08 |
| Vertical tunneling filed effect transistor based on p++ silicon and MoS2 heterostructure Shin, Gwang Hyuk; Park, Hamin; Koo, BonDae; Woo, youngjun; LEE, JAEEUN; Choi, Sung-Yool, 제 5회 한국 그래핀 심포지엄, 제 5회 한국 그래핀 심포지엄, 2018-03-29 |
Discover
Type
- 107 Article
- 8 Book
- 22,800 Conference
Date issued
- 2,114 2020 - 2024
- 8,145 2010 - 2019
- 7,999 2000 - 2009
- 3,741 1990 - 1999
- 870 1980 - 1989