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Showing results 1 to 8 of 8

1
A High Speed Unified-RAM (URAM) Cell Multi-Functioning Capacitorless DRAM and NVM

Choi, Yang-Kyu; Han, J.-W.; Ryu, S.-W.; Kim, C.; Kim, S.-H.; Im, M.; Choi, S. J.; et al, IEEE International Electron Device Meeting, pp.929 - 932, 2007-12

2
A unified-RAM (URAM) cell for multi-functioning capacitorless DRAM and NVM

Han, J.-W.; Ryu, S.-W.; Kim, C.; Kim, S.; Im, M.; Sung, J.C.; Jin, S.K.; et al, 2007 IEEE International Electron Devices Meeting, IEDM, pp.929 - 932, IEEE, 2007-12-10

3
Band offset FinFET-based URAM (unified-RAM) built on SiC for multi-functioning NVM and capacitorless 1T-DRAM

Han, J.-W.; Ryu, S.-W.; Kim, S.; Kim, C.-J.; Ahn, J.-H.; Choi, S.-J.; Kyu, J.C.; et al, Symposium on VLSI Technology Digest of Technical Papers, VLSIT 2008, pp.200 - 201, IEEE, 2008-06-17

4
Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Han, J.-W.; Ryu, S.-W.; Kim, S.; Kim, C.-J.; Ahn, J.-H.; Choi, S.-J.; Choi, K.J.; et al, IEEE International Electron Devices Meeting, IEDM 2008, IEEE, 2008-12-15

5
Multiple data storage of URAM (unified-RAM) with Multi Dual Cell (MDC) method

Bae, D.-I.; Gu, B.; Ryu, S.-W.; Choi, Yang-Kyu, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, 123, 2008-06-15

6
Nonvolatile memory characteristics of NMOSFET with siliver nanocrystals synthesized by thermal decomposition process

Ryu, S.-W.; Mo, C.B.; Hong, S.H.; Choi, Yang-Kyu, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, pp.518 - 519, IEEE, 2006-10-22

7
One-transistor nonvolatile SRAM (ONSRAM) on silicon nanowire SONOS

Ryu, S.-W.; Han, J.-W.; Moon, D.-I.; Choi, Yang-Kyu, 2009 International Electron Devices Meeting, IEDM 2009, pp.633 - 636, 2009-12-07

8
Sub-5nm all-around gate FinFET for ultimate scaling

Lee, H.; Yu, L.-E.; Ryu, S.-W.; Han, J.-W.; Jeon, K.; Jang, D.-Y.; Kim, K.-H.; et al, 2006 Symposium on VLSI Technology, VLSIT, pp.58 - 59, 2006-06-13

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