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Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM Han, J.-W.; Ryu, S.-W.; Kim, S.; Kim, C.-J.; Ahn, J.-H.; Choi, S.-J.; Choi, K.J.; et al, IEEE International Electron Devices Meeting, IEDM 2008, IEEE, 2008-12-15 |
Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT Huang, J.; Kirsch, P.D.; Oh, J.; Lee, S.H.; Price, J.; Majhi, P.; Harris, H.R.; et al, 2008 Symposium on VLSI Technology Digest of Technical Papers, VLSIT, pp.82 - 83, 2008-06-17 |
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