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1
First Demonstration of a Wrap-Gated CNT-FET with Vertically-Suspended Channels

Lee, Dong-Il; Lee, Byung-Hyun; Yoon, Jin-Su; Choi, Bong-Sik; Park, Jun-Young; Ahn, Dae-Chul; Kim, Choong-Ki; et al, International Electron Devices Meeting (IEDM), International Electron Devices Meeting (IEDM), 2016-12-05

2
Ge 기반의 소자에서 Y-ZrO2 게이트 유전체를 이용한 EOT 스케일링(~5.7 A) 및 누설 전류와 계면 트랩의 감소

Lee, Tae In; Kim, Min Ju; Manh-Cuong Nguyen; Ahn, Hyunjun; Moon, Jung Min; Lee, Tae Yoon; Yu, Hyun-Young; et al, 제25회 한국반도체학술대회, 서강대학교, 2018-02-07

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