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Enhancement of high temperature data retention by La2O3-doped nitride for charge-trap type flash memory device

Park, JK; Park, Y; Lee, Seok-Hee; Lim, SK; Oh, JS; Joo, MS; Hong, K; et al, 제18회 한국반도체학술대회, 한국물리학회 반도체분과회, 한국재료학회, 대한전기학회 전기재료 연구회, 2011-02

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