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Proposal of P-Channel FE NAND with High Drain Current and Feasible Disturbance for Next Generation 3D NAND Kuk, Songhyeon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Junpyo; Kim, Sanghyeon, 2023 IEEE International Memory Workshop, IMW 2023, Institute of Electrical and Electronics Engineers Inc., 2023-05 |
Strategy for 3D Ferroelectric Transistor: Critical Surface Orientation Dependence of HfZrOx on Si Kuk, Songhyeon; Han, Jae-Hoon; Kim, Bong Ho; Kim, Joon Pyo; Kim, Sanghyeon, 2023 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2023, Institute of Electrical and Electronics Engineers Inc., 2023-06-13 |
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