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Showing results 6 to 10 of 10

6
Interface engineering by inserting multilayer graphene barrier electrode for low power and highly uniform polymer nonvolatile memory

Jang, Byung Chul; Seong, Hyejeong; Kim, Jong Yun; Koo, Beom Jun; Kim, Sung Kyu; Yang, Sang Yoon; Im, Sung Gap; et al, Graphene 2016, Graphene 2016, 2016-04-21

7
Interface engineering using multilayer graphene barrier electrode for uniform and reliable polymer memory

Jang, Byung Chul; Seong, Hyejeong; Kim, Jong Yun; Koo, Beom Jun; Im, SungGap; Choi, Sung-Yool, NANO KOREA 2015, 나노기술연구협의회, 2015-07-02

8
Multilevel resistive switching memory based on two-dimensional (2D) layered materials

Shin, Gwang Hyuk; Kim, Choong Ki; Bang, Gyeong Sook; Kim, Jong Yun; Jang, Byung Chul; Koo, Beom Jun; Woo, Myung Hun; et al, ICAMD 2015, ICAMD 2015, 2015-12-08

9
Unipolar resistive switching memory based on graphene oxide for flexible crossbar array applications

Koo, Beom Jun; Kim, Jong Yun; Jang, Byung Chul; Lee, Khang June; Shin, Gwang Hyuk; Choi, Sung-Yool, NANO KOREA 2015, 나노기술연구협의회, 2015-07-02

10
Unipolar resistive switching memory using graphene oxide for flexible one diode-one resistor (1D-1R) cell array

Koo, Beom Jun; Kim, Jong Yun; Jang, Byung Chul; Choi, Sung-Yool, Graphene 2015, Graphene 2015, 2015-03-10

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