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High performance pMOSFETs using Si/SiGe/Si quantum wells with high-K/metal gate stacks and additive uniaxial strain for 22nm technology node

Cho, Byung Jin; Suthram, S; Majhi, P; Sun, G; Kalra, P; Harris, HR; Choi, KJ, International Electron Devices Meeting, pp.727 - 730, 2007

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